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APT website http: www advancedpower com

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Niveau: Supérieur, Doctorat, Bac+8
APTM20DUM08TG A PT M 20 D U M 08 TG – R ev 3 F eb ru ar y, 2 00 6 APT website – 1 – 6 S Q1 Q2 D2 S2S1 G1 G2 D1 NTC1 NTC2 D2 NTC2 D2 S1 D1 NTC1 S2 G2 S2 G2 S G1 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 200 V Tc= 25°C 208 ID Continuous Drain Current Tc = 80°C 155 IDM Pulsed Drain current 832 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 10 m? PD Maximum Power Dissipation Tc = 25°C 781 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 200V RDSon = 8m? typ @ Tj = 25°C ID = 208A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits

  • source voltage

  • gate charge

  • vgs

  • drain current

  • junction temperature

  • low voltage

  • avalanche current


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APTM20DUM08TG
VDSS= 200V ual common source RDSon= 8mtyp @ Tj = 25°C MOSFET Power Module ID= 208A @ Tc = 25°C Applicatio AC and DC motor control Switched Mode Power Supplies D1 Power Factor Correction D2 Q1 Q2 Features ® G1Power MOS 7MOSFETs G 2 -Low RDSon-Low input and Miller capacitance S1 S2 -Low gate charge -Avalanche energy rated S NT C1 NT C2 -Very rugged Kelvin source for easy drive Very low stray inductance -Symmetrical design -Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits G2 D2 S2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) D2 D1 S Low junction to case thermal resistance Solderable terminals both for power and signal for S1 S2NTC2 easy PCB mounting G1 G2 NTC1 Low profile RoHS compliant Absolute maximumratingsymbol ParameterMax ratingsUnit VDSS Drain200 V- Source Breakdown Voltage Tc208= 25°C ID ContinuousDrain Current Tc155 A= 80°C IDM832Drain current Pulsed VGS Gate- Source Voltage±30 V RDSon- Source ON Resistance Drain10 mPD MaximumPower DissipationTc= 25°C781 W IARcurrent (repetitive and non repetitive) Avalanche100 A EAR50Avalanche Energy Repetitive mJ EAS3000Pulse Avalanche Energy Single  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT websitehttp:/ www.advancedpower.com1 6