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APT website http: www advancedpower com

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Niveau: Supérieur, Doctorat, Bac+8
APTM10TAM09FP A PT M 10 TA M 09 FP – R ev 0 S ep te m be r, 20 04 APT website – 1 – 6 W VBUS1 VBUS2 VBUS3 0/VBUS3 V G5 G6 S5 S6 0/VBUS1 S2 G2 G1 S1 0/VBUS2 U S3 S4 G3 G4 S5 G5 G6 S6 VBUS 2 0/VBUS 3 VBUS 3 0/VBUS 2 WV G4 S4 G3 S3 VBUS 1 0/VBUS 1 S1 G1 S2 G2 U Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 139 ID Continuous Drain Current Tc = 80°C 100 IDM Pulsed Drain current 430 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 9 m? PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 09m? max @ Tj = 25°C ID = 139A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon -

  • source voltage

  • gate charge

  • vgs

  • drain current

  • junction temperature

  • operating area

  • gate charge - fast intrinsic

  • very low


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Language English
APTM10TAM09FP
VDSS= 100V Triple phase leg RDSon= 09mmax @ Tj = 25°C MOSFET Power Module ID= 139A @ Tc = 25°C Applicatio VBUS1 VBUS2 VBUS3 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies G1 G3 G5 Motor control S1 S3 S5 U V W Features ® Power MOS VFREDFETs G2 G4 G6 -Low RDSon-Low input and Miller capacitance S2 S4 S6 -Low gate charge 0/VBUS1 0/VBUS20/VBUS3 -Fast intrinsic diode  -Avalanche energy rated  -Very rugged n source for easy drive Kelvi Very low stray inductance -Symmetrical design -Lead frames for power connections High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) VBUS 1VBUS 2VB US 3 Low junction to case thermal resistance G1 G3 G5 Solderable terminals both for power and signal for S1 S3 S5 0/VBUS 10/VBUS 20/VBUS 3 easy PCB mounting S2 S4 S6 Very low (12mm) profile G2 G4 G6 Each leg can be easily paralleled to achieve a phase leg of three times the current capability U VW Module can be configured as a three phase bridge Module can be configured as a boost followed by a full bridge Absolute maximumratingsymbol ParameterMax ratingsUnit VDSS- Source Breakdown Voltage100 V Drain Tc= 25°C139 IDDrain Current Continuous A Tc100= 80°C IDM430Drain current Pulsed VGS±30 V Gate- Source Voltage RDSon9 m- Source ON Resistance DrainPDPower DissipationT Maximumc= 25°C390 W IAR Avalanche100 Acurrent (repetitive and non repetitive) EARAvalanche Energy Repetitive50 mJ EAS3000 SinglePulse Avalanche Energy  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT websitehttp:/ www.advancedpower.com1 6