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MAXIMUM RATINGS All Ratings: TC 25°C unless otherwise specified

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Description

Niveau: Supérieur, Doctorat, Bac+8
05 0- 70 08 R ev B 9 -2 00 4 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. G D S CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - TO-247 D3PAK BLL SLL APT20M34BLL APT20M34SLL 200V 74A 0.034? • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK Package Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7 ® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. POWER MOS 7 R MOSFET Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 37A) Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Symbol VDSS

  • source voltage

  • body diode

  • drain current

  • gate voltage

  • diode forward

  • switching energy

  • lower miller

  • current


Subjects

Informations

Published by
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Language English

APT20M34BLL
APT20M34SLL
200V74A0.034

R POWER MOS 7 MOSFET
LLB®
D
3
PAK
Power MOS 7

is a new generation of low loss, high voltage, N-Channel
TO-247
enhancement mode power MOSFETS. Both conduction and switching
®losses are addressed w
®
ith Power MOS 7 by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7

combines lower conduction and switching losses
SLL
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D•Lower Input Capacitance•Increased Power Dissipation
•Lower Miller Capacitance•Easier To Drive
G
•Lower Gate Charge, Qg•TO-247 or Surface Mount D
3
PAK Package
S
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
SymbolParameterAPT20M34BLL_SLLUNIT
V
DSS
Drain-Source Voltage
200
Volts
I
D
Continuous Drain Current @ T
C
= 25°C
74
Amps
I
DM
Pulsed Drain Current
1
296
V
GS
Gate-Source Voltage Continuous
±30
Volts
V
GSM
Gate-Source Voltage Transient
±40
PTotal Power Dissipation @ T
C
= 25°C
403
Watts
DLinear Derating Factor
3.23
W/°C
T
J
,T
STG
Operating and Storage Junction Temperature Range
-55 to 150
C°T
L
Lead Temperature: 0.063" from Case for 10 Sec.
300
I
AR
Avalanche Current
1
(Repetitive and Non-Repetitive)
74
Amps
E
AR
Repetitive Avalanche Energy
1
30
JmE
AS
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
SymbolCharacteristic / Test ConditionsMINTYPMAXUNIT
BV
DSS
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
200
Volts
R
DS(on)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 37A)
0.034
Ohms
Zero Gate Voltage Drain Current (V
DS
= 200V, V
GS
= 0V)
100
I
DSS
µA
Zero Gate Voltage Drain Current (V
DS
= 160V, V
GS
= 0V, T
C
= 125°C)
500
I
GSS
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
±100
nA
V
GS(th)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
35
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

DYNAMIC CHARACTERISTICSAPT20M34BLL_SLL
SymbolCharacteristicTest ConditionsMINTYPMAXUNIT
C
iss
Input Capacitance
V

= 0V
3660
SGC
oss
Output Capacitance
V
DS

= 25V
1170
pF
C
rss
Reverse Transfer Capacitance
f

= 1 MHz
60
Q
g
Total Gate Charge
3V
GS

= 10V
60
Q
gs
Gate-Source Charge
V
DD

= 100V
23
nC
I
D

= 74A

@ 25°C
Q
gd
Gate-Drain ("Miller") Charge
26
tTurn-on Delay Time
RESISTIVE SWITCHING
10
d(on)V
GS

=

15V
t
r
Rise Time
V
DD

=

100V
27ns
t
d(off)
Turn-off Delay Time
I
D

=

74A

@ 25°C
25
R

=

0.6

t
f
Fall Time
G
4
INDUCTIVE SWITCHING @ 25°C
E
on
Turn-on Switching Energy
6V

=

133V, V= 15V
505
SGDDE
off
Turn-off Switching Energy
I
D

=

74A, R
G

=

5

395
INDUCTIVE SWITCHING @ 125°C
µ
J
E
on
Turn-on Switching Energy
6V

=

133V V= 15V
640
SGDDE
off
Turn-off Switching Energy
I
D

=

74A, R
G

=

5

425
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
SymbolCharacteristic / Test ConditionsMINTYPMAXUNIT
I
S
Continuous Source Current (Body Diode)
74
spmAI
SM
Pulsed Source Current
1
(Body Diode)
296
V
SD
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -74A)
1.3
Volts
t
rr
Reverse Recovery Time (I
S
= -74A, dl
S
/dt = 100A/µs)
160
ns
Q
rr
Reverse Recovery Charge (I
S
= -74A, dl
S
/dt = 100A/µs)
1.3
µC
dv
/
dt
Peak Diode Recovery
dv
/
dt 5
5
V/ns
THERMAL CHARACTERISTICS
SymbolCharacteristicMINTYPMAXUNIT
R
θ
JC
Junction to Case
0.31
W/C°R
θ
JA
Junction to Ambient
40
1Repetitive Rating: Pulse width limited by maximum junction4Starting T
j

=

+25°C, L = 0.470mH, R
G

=

25

, Peak I
L
= 74A
temperature5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
2Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%device itself.
IS


-
ID
74A
di
/
dt


700A/µs

VR



VDSS

TJ


150
°
C
3See MIL-STD-750 Method 34716 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
53.00.300.9
52.07.002.00.150.5Note:
t10.100.3
t2
Duty Factor D = t1/t2
0.050.1
Peak TJ = PDM x Z
θ
JC + TC
0.05SINGLE PULSE
010
-5
10
-4
10
-3
10
-2
10
-1
1.0
FIGURE 1, MAXIMUM EFFECTIVE T
R
R
E
A
C
N
TA
SI
N
E
G
N
U
T
L
T
A
H
R
E
P
R
U
M
L
A
S
L
E
I
D
M
U
P
R
E
A
D
T
A
I
N
O
C
N (
E
S
, J
E
U
C
N
O
C
N
T
D
I
S
O
)
N-TO-CASE vs PULSE DURATION

Typical Performance Curves
APT20M34BLL_SLL
160VGS=10 &15V
1406.5V
021RC MODEL1006V
tJeumncpt.i (o
°
nC)
080.1310.00789F5.5V
Power60
(watts)5V
400.1800.161F4.5V
02Case temperature. (
°
C)4V
0051015202530
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICSFIGURE 3, LOW

VOLTAGE OUTPUT CHARACTERISTICS
1201.4
VDS2>5 0IDµ S(EOCN.) xP U RLSDES (TOENS)TMAX.VNOR= M1A0LVI Z E@D 3T7OA
SG100
@ <0.5 % DUTY CYCLE
1.3
082.1VGS=10V
061.140TJ = +25°C1.0
TJ = +125°C
20TJ = -55°C0.9
VGS=20V
8.00024681012020406080100120
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICSFIGURE 5, R
DS
(ON) vs DRAIN CURRENT
801.15
0701.106501.05
04301.00
200.95
0109.00255075100125150-50-250255075100125150
T
C
, CASE TEMPERATURE (°C)T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATUREFIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.51.2
I
D
= 37A
V
GS
= 10V
1.1
0.20.15.19.00.18.00.50.7
0.00.6
-50-2T5, JU0NCTI2O5N TE50MPE7R5ATU10R0E (°1C2)5150-50-25T, 0CAS2E5 TEM5P0ERA7T5UR1E0 (0°C)125150
CJFIGURE 8, ON-RESISTANCE vs. TEMPERATUREFIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

792LIOMIPTEERDA TBIYO RN DHSE (ROEN)
00101TC =+25°C
STIJN =G+L1E5 0P°UCLSE
1110100200
V, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIG
D
U
S
RE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 74A
12VDS=40V
VDS=100V
8VDS=160V
4

Sµ001Sm1Sm01

00102030405060708090100
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
05t
d(off)
04V
DD
= 133V
30
R
G
= 5

T
J
= 125°C
L = 100µH
02t
d(on)
0101030507090110130
)A( IFIGURE 14, DELAY
D
TIMES vs CURRENT
0021V
DD
= 133V
R
G
= 5

1000
T
J
= 125°C
L = 100µH
E
ON
includes
E
on
800
diode reverse recovery.
006400E
off
00201030507090110130
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT

20,000
APT20M34BLL_SLL
10,000
Cssi1,000Coss
001Cssr1001020304050
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,

CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
002001TJ =+150°C
TJ =+25°C
01

10.30.50.70.91.11.31.5
V, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE
S
1
D
3,

SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
V
DD
= 133V
R
G
= 5

100
T
J
= 125°C
L = 100µH
08tf06tr400201030507090110130
)A(IFIGURE 15, RISE AND
D
F

ALL TIMES vs CURRENT
0021E1000
off
008Eno006400
V
DD
= 133V
I
D
= 74A
200
T
J
= 125°C
EL
O
=
N
1i0n0clµuHdes
0
diode reverse recovery.
05R10, G1A5TE 2R0ESI2S5TA3N0CE (3O5hm40s)4550
GFIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

Typical Performance Curves

10%Gate Voltage
T
J
125°C
t
d(on)
t
Drain Current
r%09

5%10%5%
Switching EnergyDrain Voltage

Figure 18, Turn-on Switching Waveforms and Definitions

VDD

IVDSD

GD.U.T.

APT60S20

Figure 20, Inductive Switching Test Circuit

APT20M34BLL_SLL

%09Gate VoltageT125°C
Jt
d(off)
tfDrain Voltage
%09

%010Drain Current
Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

3TO
-
247 Package OutlineDPAK Package Outline
4.98 (.196)
54..3619 ((..210895))15.49 (.610)
5.08 (.200)1165..0955( .(.663228))1133..5411( .(.553228))
1.49 (.059)16.26 (.640)
1.47 (.058)1.04 (.041)
2.49 (.098)
1.57 (.062)1.15(.045)
6.15 (.242) BSC65..2308 ((..224142))
Revised
11.51 (.453)
20.80 (.819)
Revised
1133..9799( .(.555413))
8/29/97
11.61 (.457)
21.46 (.845)
4/18/95
33..8510 ((..115308))
00..5466 ((..002128)) {3 Plcs}
1.27 (.050)
2.87 (.113)
0.020 (.001)1.40 (.055)
4.50 (.177) Max.3.12 (.123)
0.178 (.007)1.98 (.078)43..0861 ((..116500))

2.67 (.105)
0.40 (.016)1.65 (.065)
2.84 (.112)1.22 (.048)2.08 (.082)(Base of Lead)
0.79 (.031)19.81 (.780)2.13 (.084)
1.32 (.052)
Heat Sink (Drain)
20.32 (.800)1.01 (.040)
Gate
5.45 (.215) BSC
and Leads
1.40 (.055)
Drain
{2 Plcs.}
are Plated
Source
Source
22..5291 ((..100827))5.45 (.215) BSC
Drain
2-Plcs.
Gate
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.