IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
10 Pages
English
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IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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10 Pages
English

Description

Niveau: Secondaire, Lycée, Terminale
IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE E G n-ch an ne l C VCES = 1200V VCE(on) typ. = 3.10V @VGE = 15V, IC = 10A PD- 91579A TO-247AC Short Circuit Rated UltraFast IGBT Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 20 IC @ TC = 100°C Continuous Collector Current 10 ICM Pulsed Collector Current 40 A ILM Clamped Inductive Load Current 40 IF @ TC = 100°C Diode Continuous Forward Current 10 IFM Diode Maximum Forward Current 40 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) Parameter Min. Typ. Max. Units R?JC Junction-to-Case - IGBT ––– ––– 1.2 R?JC Junction-to-Case - Diode ––– ––– 2.5 °C/W R?CS Case-to-Sink, flat, greased surface ––– 0.24 ––– R?JA Junction-to-Ambient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21) ––– g

  • irgph30md2 products 

  • time —

  • circuit withstand

  • switching loss

  • typical switching

  • tsc short

  • recovery diode

  • diode

  • gate resistance


Subjects

Informations

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Language English

Exrait

PD 91579A IRG4PH30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features High short circuit rating optimized for motor control,  t =10µs, V = 720V , T = 125°C, sc CC J  VGE= 15V  Combines low conduction losses with high G  switching speed Tighter parameter distribution and higher efficiency E  than previous generations TMn c h a n n e l IGBT copackaged with HEXFRED ultrafast,  ultrasoft recovery antiparallel diodes Benefits Latest generation 4 IGBT's offer highest power density  motor controls possible TM optimized for performance with IGBTs.HEXFRED diodes  Minimized recovery characteristics reduce noise, EMI and  switching losses This part replaces IRGPH30MD2 products  For hints see design tip 97003
Absolute Maximum Ratings Parameter VCESCollectortoEmitter Voltage IC@ TCContinuous Collector Current= 25°C IC@ TC= 100°C Continuous Collector Current ICMPulsed Collector CurrentQ ILMClamped Inductive Load CurrentR IF@ TCDiode Continuous Forward Current= 100°C IFMDiode Maximum Forward Current t Short Circuit Withstand Time sc VGEGatetoEmitter Voltage PD@ TC= 25°C Maximum Power Dissipation PD@ TC= 100°C Maximum Power Dissipation TJOperating Junction and TSTGStorage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 632 or M3 Screw. Thermal Resistance Parameter RθJCJunctiontoCase  IGBT RθJCJunctiontoCase  Diode RθCSCasetoSink, flat, greased surface RθJAJunctiontoAmbient, typical socket mount Wt Weight www.irf.com
Short Circuit Rated UltraFast IGBT
VCES= 1200V
VCE(on) typ.=3.10V
@VGE= 15V, IC= 10A
TO247AC
Max. 1200 20 10 40 40 10 40 10 ± 20 100 42 55 to +150
300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m)
Min. ––– ––– ––– ––– –––
Typ. ––– ––– 0.24 ––– 6 (0.21)
Max. 1.2 2.5 ––– 40 –––
Units V
A
µs V
W
°C
Units
°C/W
g (oz) 1 2/7/2000