Semiconductor Components Industries LLC October Rev

-

English
8 Pages
Read an excerpt
Gain access to the library to view online
Learn more

Description

Niveau: Secondaire, Lycée, Terminale
? Semiconductor Components Industries, LLC, 2000 October, 2000 – Rev. 3 1 Publication Order Number: 1N5820/D 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low VF • Low Power Loss/High Efficiency • Low Stored Charge, Majority Carrier Conduction Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16? from case • Shipped in plastic bags, 500 per bag • Available Tape and Reeled, 1500 per reel, by adding a “RL'' suffix to the part number • Polarity: Cathode indicated by Polarity Band • Marking: 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Please See the Table on the Following Page Device Package Shipping ORDERING INFORMATION AXIAL LEAD CASE 267–03 STYLE 1 SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS Preferred devices are recommended choices for future use and best overall value.

  • maximum reference

  • non–repetitive peak

  • thermal resistance

  • dissipation pr

  • forward power

  • ambient temperature

  • axial lead


Subjects

Informations

Published by
Reads 13
Language English
Report a problem

1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
...employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the–art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low–voltage, high–frequency inverters, free wheeling diodes, and http://onsemi.com
polarity protection diodes.
• Extremely Low V SCHOTTKY BARRIERF
• Low Power Loss/High Efficiency RECTIFIERS
• Low Stored Charge, Majority Carrier Conduction 3.0 AMPERES
Mechanical Characteristics: 20, 30, 40 VOLTS
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 500 per bag
• Available Tape and Reeled, 1500 per reel, by adding a RL’’ suffix to
the part number
• Polarity: Cathode indicated by Polarity Band
• Marking: 1N5820, 1N5821, 1N5822
AXIAL LEAD
CASE 267–03
STYLE 1MAXIMUM RATINGS
Please See the Table on the Following Page
MARKING DIAGRAM
1N582x
1N582x = Device Code
x = 0, 1 or 2
ORDERING INFORMATION
Device Package Shipping
1N5820 Axial Lead 500 Units/Bag
1N5820RL 1500/Tape & Reel
1N5821 Axial Lead 500 Units/Bag
1N5821RL 1500/Tape & Reel
1N5822 Axial Lead 500 Units/Bag
1N5822RL 1500/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2000 1 Publication Order Number:
October, 2000 – Rev. 3 1N5820/D1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage V 20 30 40 VRRM
Working Peak Reverse V VRWM
DC Blocking Voltage VR
Non–Repetitive Peak Reverse Voltage V 24 36 48 VRSM
RMS Reverse Voltage V 14 21 28 VR(RMS)
Average Rectified Forward Current (Note 1.) I 3.0 AO
V 0.2 V , T = 95°CR(equiv) R(dc) L
(R = 28°C/W, P.C. Board Mounting, see Note 5.)JA
Ambient Temperature T 90 85 80 °CA
Rated V , P = 0R(dc) F(AV)
R = 28°C/WJA
Non–Repetitive Peak Surge Current I 80 (for one cycle) AFSM
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T = 75°C)L
Operating and Storage Junction Temperature Range T , T 65 to +125 °CJ stg
(Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied) T 150 °CJ(pk)
*THERMAL CHARACTERISTICS (Note 5.)
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R 28 °C/WJA
*ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 1.)L
Characteristic Symbol 1N5820 1N5821 1N5822 Unit
Maximum Instantaneous Forward Voltage (Note 2.) V VF
(i = 1.0 Amp) 0.370 0.380 0.390F
(i = 3.0 Amp) 0.475 0.500 0.525F
(i = 9.4 Amp) 0.850 0.900 0.950F
Maximum Instantaneous Reverse Current i mAR
@ Rated dc Voltage (Note 2.)
T = 25°C 2.0 2.0 2.0L
T = 100°C 20 20 20L
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N5820–22.
http://onsemi.com
2
qqmq1N5820, 1N5821, 1N5822
NOTE 3. — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal use in common rectifier circuits, Table 1. indicates
runaway must be considered when operating this rectifier at suggested factors for an equivalent dc voltage to use for
reverse voltages above 0.1 V . Proper derating may be conservative design, that is:RWM
accomplished by use of equation (1). V = V F (4)R(equiv) (FM)
The factor F is derived by considering the properties of theT = T R P R P (1)A(max) J(max) JA F(AV) JA R(AV)
various rectifier circuits and the reverse characteristics ofwhere T = Maximum allowable ambient temperature
Schottky diodes.T = Maximum allowable junction temperatureJ(max)
(125°C or the temperature at which thermal EXAMPLE: Find T for 1N5821 operated in aA(max)
runaway occurs, whichever is lowest) 12–volt dc supply using a bridge circuit with capacitive filter
P = Average forward power dissipation such that I = 2.0 A (I = 1.0 A), I /I = 10, InputF(AV) DC F(AV) (FM) (AV)
P = Average reverse power dissipation Voltage = 10 V , R = 40°C/W.R(AV) (rms) JA
R = Junction–to–ambient thermal resistanceJA Step 1. Find V Read F = 0.65 from Table 1. ,R(equiv).
Figures 1, 2, and 3 permit easier use of equation (1) by V = (1.41) (10) (0.65) = 9.2 V.R(equiv)
taking reverse power dissipation and thermal runaway into
Step 2. Find T from Figure 2. Read T = 108°CR Rconsideration. The figures solve for a reference temperature
@ V = 9.2 V and R = 40°C/W.as determined by equation (2). R JA
Step 3. Find P from Figure 6. **Read P = 0.85 WT = T R P (2) F(AV) F(AV)R J(max) JA R(AV)
I(FM)Substituting equation (2) into equation (1) yields: @ 10 and I 1.0 A.F(AV)I(AV)
T = T R P (3)A(max) R JA F(AV)
Step 4. Find T from equation (3).A(max)
Inspection of equations (2) and (3) reveals that T is theR T = 108 (0.85) (40) = 74°C.
ambient temperature at which thermal runaway occurs or
**Values given are for the 1N5821. Power is slightly lowerwhere T = 125°C, when forward power is zero. TheJ
for the 1N5820 because of its lower forward voltage, andtransition from one boundary condition to the other is
higher for the 1N5822. Variations will be similar for theevident on the curves of Figures 1, 2, and 3 as a difference
MBR–prefix devices, using P from Figure 6.in the rate of change of the slope in the vicinity of 115°C. The F(AV)
data of Figures 1, 2, and 3 is based upon dc conditions. For
Table 1. Values for Factor F
Full Wave,
Circuit Half Wave Full Wave, Bridge Center Tapped*†
Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
*Note that V 2.0 V . †Use line to center tap voltage for V .R(PK) in(PK) in
http://onsemi.com
3
qqqqqqq1N5820, 1N5821, 1N5822
125 125
20 15 20
10 15
108.0115 115
8.0
105 105
R ( °C/W) = 70 R ( °C/W) = 70JA JA
50 5095 95
40 40
28 28
85 85
75 75
2.0 3.0 4.0 5.0 7.0 10 15 20 3.0 4.0 5.0 7.0 10 15 20 30
V , REVERSE VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS)R R
Figure 1. Maximum Reference Temperature Figure 2. Maximum Reference Temperature
1N5820 1N5821
40125
20 MAXIMUM35
15 TYPICAL
115
10 30
8.0
25105
20
R ( °C/W) = 70JA95
15
50
10
85 40 BOTH LEADS TO HEAT SINK,
5.028 EQUAL LENGTH
75 0
4.0 5.0 7.0 10 15 20 30 40 0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 1.0
V , REVERSE VOLTAGE (VOLTS) L, LEAD LENGTH (INCHES)R
Figure 3. Maximum Reference Temperature Figure 4. Steady–State Thermal Resistance
1N5822
1.0
The temperature of the lead should be measured using a ther
LEAD LENGTH = 1/4 ″
mocouple placed on the lead as close as possible to the tie point.0.5
The thermal mass connected to the tie point is normally large
0.3 enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once0.2 P Ppk pk DUTY CYCLE = t /tp 1steady-state conditions are achieved. Using the measured val tp PEAK POWER, P , is peak of anpkue of T , the junction temperature may be determined by:L0.1 TIME equivalent square power pulse.T = T + TJ L JL t1
T = P • R [D + (1 - D) • r(t + t ) + r(t ) - r(t )] where:0.05 JL pk JL 1 p p 1
T = the increase in junction temperature above the lead temperature.JL
0.03 r(t) = normalized value of transient thermal resistance at time, t, i.e.:
0.02 r(t + t ) = normalized value of transient thermal resistance at time1 p
t + t , etc.1 p
0.01
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k
t, TIME (ms)
Figure 5. Thermal Response
http://onsemi.com
4
DDq
r(t), TRANSIENT THERMAL RESISTANCE T , REFERENCE TEMPERATURE ( C)° T , REFERENCE TEMPERATURE ( C)°
R R
(NORMALIZED)
R , THERMAL RESISTANCE
JL
T , REFERENCE TEMPERATURE ( C)°
R
JUNCTION-TO-LEAD ( C/W) °1N5820, 1N5821, 1N5822
10 NOTE 4. – APPROXIMATE THERMAL CIRCUIT MODEL
7.0
SINE WAVE5.0 R R R R R RL(K) S(K)S(A) L(A) J(A) J(K)I(FM)
3.0 (Resistive Load) T TA(A) A(K)I Pdc D(AV)2.0
T T T T TL(A) C(A) J C(K) L(K)
5.01.0 Capacitive SQUARE WAVE
100.7 Loads 20
0.5
Use of the above model permits junction to lead thermal
0.3 resistance for any mounting configuration to be found. For
T ≈ 125 °CJ0.2 a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
0.1
Terms in the model signify:0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I , AVERAGE FORWARD CURRENT (AMP) T = Ambient Temperature T = Case TemperatureF(AV) A C
T = Lead T T = Junction TL JFigure 6. Forward Power Dissipation 1N5820–22
R = Thermal Resistance, Heat Sink to AmbientS
R = Thermal Resistance, Lead to Heat SinkL
R = Thermal Resistance, Junction to CaseJ
P = Total Power Dissipation = P + PD F R
P = Forward Power DissipationF
P = Reverse Power DissipationR
(Subscripts (A) and (K) refer to anode and cathode sides,
respectively.) Values for thermal resistance components
are:
R = 42°C/W/in typically and 48°C/W/in maximumL
R = 10°C/W typically and 16°C/W maximumJ
The maximum lead temperature may be found as follows:
T = T TL J(max) JL
T R · Pwhere JL JL D
Mounting Method 1 Mounting Method 3
P.C. Board where available P.C. Board with
NOTE 5. — MOUNTING DATA copper surface is small. 2–1/2″ x 2–1/2″
copper surface.
LLData shown for thermal resistance junction–to–ambient (R )JA
for the mountings shown is to be used as typical guideline values L = 1/2 ″
for preliminary engineering, or in case the tie point temperature
cannot be measured.
TYPICAL VALUES FOR R IN STILL AIRJA
Mounting Method 2Lead Length, L (in)
Mounting BOARD GROUND
Method 1/8 1/4 1/2 3/4 R LLJA PLANE
1 50 51 53 55 °C/W
2 58 59 61 63 °C/W
VECTOR PUSH-IN
3 28 °C/W
TERMINALS T-28
http://onsemi.com
5
qqqqqq
qq

q
q
q

qq
qq
P , AVERAGE POWER DISSIPATION (WATTS)
F(AV)1N5820, 1N5821, 1N5822
50 100
70
30
50
20
T = 75 °CL
f = 60 Hz
T = 100 °CJ 30
10
20 1 CYCLE7.0
5.0
SURGE APPLIED AT RATED LOAD CONDITIONS
1025°C3.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
NUMBER OF CYCLES
2.0
Figure 8. Maximum Non–Repetitive Surge
Current
1.0 100
0.7 50
T = 125 °CJ
0.5 20
10
100°C
0.3
5.0
0.2
2.0 75°C
1.0
0.1 0.5
0.20.07
25°C0.1
0.05
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.05 1N5820
v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1N5821F
0.02 1N5822
Figure 7. Typical Forward Voltage 0.01
0 4.0 8.0 12 16 20 24 28 32 36 40
V , REVERSE VOLTAGE (VOLTS)R
500
Figure 9. Typical Reverse Current
1N5820
300
NOTE 6. — HIGH FREQUENCY OPERATION
200
1N5821T = 25 °C Since current flow in a Schottky rectifier is the result ofJ
f = 1.0 MHz majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to minor-
100
ity carrier injection and stored charge. Satisfactory circuit
analysis work may be performed by using a model consist-1N582270
ing of an ideal diode in parallel with a variable capacitance.
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 (See Figure 10.)
V , REVERSE VOLTAGE (VOLTS)R
Figure 10. Typical Capacitance
http://onsemi.com
6
C, CAPACITANCE (pF) i , INSTANTANEOUS FORWARD CURRENT (AMP)
F
I , REVERSE CURRENT (mA) I , PEAK HALF-WAVE CURRENT (AMP)
R FSM1N5820, 1N5821, 1N5822
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267–03
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSIK A
Y14.5M, 1982.
D 2. CONTROLLING DIMENSION: INCH.
1 2
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.370 0.380 9.40 9.65
B 0.190 0.210 4.83 5.33B
D 0.048 0.052 1.22 1.32K
K 1.000 --- 25.40 ---
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
http://onsemi.com
71N5820, 1N5821, 1N5822
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical” parameters which may be provided in SCILL C data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment: CENTRAL/SOUTH AMERICA:
Literature Distribution Center for ON Semiconductor Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
P.O. Box 5163, Denver, Colorado 80217 USA Email: ONlit–spanish@hibbertco.com
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
Fax: 303–675–2176 or 800–344–3867 T then Dial 866–297–9322
Email: ONlit@hibbertco.com
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:N. American Technical Support: 800–282–9855 T
001–800–4422–3781
EUROPE: LDC for ON Semiconductor – European Support Email: ONlit–asia@hibbertco.com
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
JAPAN: ON Semiconductor, Japan Customer Focus CenterEmail: ONlit–german@hibbertco.com
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Phone: 81–3–5740–2700Email: ONlit–french@hibbertco.com
Email: r14525@onsemi.comEnglish Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: ONlit@hibbertco.com ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 For additional information, please contact your local
*Available from Germany, France, Italy, UK, Ireland Sales Representative.
1N5820/Dhttp://onsemi.com
8